GA05JT12-247
TRANS SJT 1200V 5A TO247ABManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor GA05JT12-247 is a 1200V Silicon Carbide Junction Transistor (SJT) designed for high-performance power applications. This component offers a continuous drain current capability of 5A at a case temperature of 25°C, with a maximum power dissipation of 106W at the same temperature. The drain-to-source voltage (Vdss) is rated at 1200V, and the on-resistance (Rds On) is specified at 280mOhm at 5A. Packaged in a standard TO-247-3 through-hole configuration, this device operates efficiently up to a junction temperature of 175°C. Typical applications include power factor correction, electric vehicle charging, industrial motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 5A |
| FET Feature | - |
| Power Dissipation (Max) | 106W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247AB |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
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