GA05JT03-46
TRANS SJT 300V 9A TO46Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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The GeneSiC Semiconductor GA05JT03-46 is a Silicon Carbide Junction Transistor designed for high-performance applications. This electronic component features a Drain to Source Voltage (Vdss) of 300 V and a continuous drain current (Id) capability of 9A at 25°C (Tc). With a maximum power dissipation of 20W (Tc), it offers robust thermal performance. The device exhibits a typical Rds On of 240mOhm at 5A. Packaged in a TO-46-3 through-hole configuration, the GA05JT03-46 operates across a junction temperature range of -55°C to 225°C. This component is suitable for demanding power conversion and control systems found in industrial, automotive, and aerospace sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-46-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 5A |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-46 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 300 V |
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