GA04JT17-247
TRANS SJT 1700V 4A TO247ABManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor GA04JT17-247 is a Silicon Carbide Junction Transistor (SJT) designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 1700 V and a continuous drain current (Id) of 4 A at a case temperature of 95°C. The device offers a maximum on-resistance (Rds On) of 480 mOhm at 4 A. With a maximum power dissipation of 106 W at the case temperature, it utilizes a TO-247-3 package for through-hole mounting. The operating junction temperature range is up to 175°C. This transistor is suitable for demanding power conversion systems, including electric vehicle charging, industrial power supplies, and renewable energy inverters.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (95°C) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4A |
| FET Feature | - |
| Power Dissipation (Max) | 106W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247AB |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1700 V |
Request a Quote
Clients Also Buy
G3F320MT12J-TR
1200V 320M TO-263-7 G3F SIC MOSF
GA50JT12-263
TRANSISTOR 1200V 100A TO263-7
G2R120MT33J
SIC MOSFET N-CH TO263-7
