GA03JT12-247
TRANS SJT 1200V 3A TO247ABManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor GA03JT12-247 is a Silicon Carbide Junction Transistor (SJT) designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous Drain Current (Id) rating of 3 A at 95°C case temperature, with a maximum power dissipation of 15 W (Tc). The Rds(On) is specified at 460 mOhm at 3 A. Packaged in a TO-247AB through-hole package, this device is suitable for demanding power conversion and electric vehicle applications. The operating junction temperature range is up to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) (95°C) |
| Rds On (Max) @ Id, Vgs | 460mOhm @ 3A |
| FET Feature | - |
| Power Dissipation (Max) | 15W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247AB |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 1200 V |
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