G3R75MT12K
SIC MOSFET N-CH 41A TO247-4Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor G3R™ series N-Channel Silicon Carbide (SiC) MOSFET, part number G3R75MT12K. This device features a 1200V drain-source voltage (Vdss) and a continuous drain current of 41A at 25°C (Tc), with a maximum power dissipation of 207W (Tc). The G3R75MT12K offers a low on-resistance of 90mOhm maximum at 20A and 15V gate drive. Key parameters include a gate charge (Qg) of 54 nC maximum at 15V and input capacitance (Ciss) of 1560 pF maximum at 800V. Designed for high-performance applications, this TO-247-4 packaged device operates across a temperature range of -55°C to 175°C (TJ). It is suitable for power conversion systems in industries such as industrial power supplies, electric vehicle charging, and renewable energy.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 41A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 207W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 7.5mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 800 V |
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