G3R75MT12J-TR
1200V 75M TO-263-7 G3R SIC MOSFEManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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The GeneSiC Semiconductor G3R75MT12J-TR is a 1200V N-Channel Silicon Carbide MOSFET from the G3R™, LoRing™ series. This device features a low on-resistance of 85mOhm at 20A and 18V gate drive, with a continuous drain current capability of 38A (Tc). Designed for high-power applications, it offers a maximum power dissipation of 196W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). Key parameters include a gate charge of 47 nC @ 15 V and input capacitance of 1545 pF @ 800 V. The component is supplied in a TO-263-7 surface mount package on tape and reel. This technology is commonly utilized in electric vehicle charging, industrial power supplies, and motor drives.
Additional Information
Series: G3R™, LoRing™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 20A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 196W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 10mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1545 pF @ 800 V |
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