G3R75MT12J
SIC MOSFET N-CH 42A TO263-7Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor G3R™ N-Channel SiCFET, part number G3R75MT12J, offers a 1200V drain-source voltage and 42A continuous drain current at 25°C. This TO-263-7 surface mount device features a maximum ON-resistance of 90mOhm at 20A and 15V gate-source voltage. With a maximum power dissipation of 224W, it is suitable for demanding applications. The device exhibits a typical gate charge of 54 nC and input capacitance of 1560 pF. Operating temperature ranges from -55°C to 175°C. This component is utilized in power conversion and industrial motor control applications.
Additional Information
Series: G3R™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 20A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 224W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 7.5mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 800 V |
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