G3R60MT07J-TR
650V 60M TO-263-7 G3R SIC MOSFETManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The GeneSiC Semiconductor G3R60MT07J-TR is a 650V, 60mO N-Channel Silicon Carbide MOSFET designed for high-efficiency power conversion applications. Featuring the GeneSiC LoRing™ technology, this device offers reduced switching losses and improved reliability. With a continuous drain current of 44A at 25°C and a maximum power dissipation of 182W (Tc), it is suitable for demanding applications such as power supplies, motor drives, and electric vehicle charging infrastructure. The TO-263-7 package facilitates efficient surface mounting and thermal management. This device operates across a wide temperature range of -55°C to 175°C (TJ), utilizing a 15V gate drive voltage.
Additional Information
Series: G3R™, LoRing™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 182W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 750 V |
Request a Quote
Clients Also Buy
G3R160MT17J
SIC MOSFET N-CH 18A TO263-7
G3R450MT17J-TR
1700V 450M TO-263-7 G3R SIC MOSF
G3R75MT12J-TR
1200V 75M TO-263-7 G3R SIC MOSFE
