G3R60MT07J
750V 60M TO-263-7 G3R SIC MOSFETManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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The GeneSiC Semiconductor G3R60MT07J is a 750V Silicon Carbide (SiC) MOSFET designed for high-performance applications. This component is housed in a TO-263-7 surface-mount package, offering efficient thermal management. As part of the G3R™ series, this SiC MOSFET enables superior switching characteristics and reduced conduction losses compared to traditional silicon devices. Its high breakdown voltage and advanced SiC technology make it suitable for power conversion systems in industrial automation, electric vehicle charging infrastructure, and renewable energy applications. The device supports a gate-source voltage range of +20V to -10V.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | +20V, -10V |
| Drain to Source Voltage (Vdss) | 750 V |
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