G3R60MT07D
750V 60M TO-247-3 G3R SIC MOSFETManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor G3R™ series SiCFET, part number G3R60MT07D, offers a 750V drain-to-source voltage in a TO-247-3 package. This through-hole component utilizes Silicon Carbide technology, delivering efficient power switching capabilities. The G3R60MT07D is designed for applications requiring high voltage and performance, commonly found in industrial power supplies, electric vehicle charging, and renewable energy systems. Key electrical parameters include a maximum gate-source voltage of +20V and -10V.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | +20V, -10V |
| Drain to Source Voltage (Vdss) | 750 V |
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