G3R45MT17K
SIC MOSFET N-CH 61A TO247-4Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor G3R™ series N-Channel SiCFET, part number G3R45MT17K, offers a 1700V drain-to-source voltage (Vdss) and 61A continuous drain current (Id) at 25°C (Tc). This through-hole component in a TO-247-4 package features a maximum on-resistance (Rds On) of 58mOhm at 40A and 15V. Key parameters include a maximum gate charge (Qg) of 182 nC at 15V and input capacitance (Ciss) of 4523 pF at 1000V. The device supports a gate-source voltage (Vgs) range of ±15V and a threshold voltage (Vgs(th)) maximum of 2.7V at 8mA. Maximum power dissipation is 438W (Tc). This component is suitable for applications in high-voltage power conversion, electric vehicles, and industrial motor drives.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 40A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 438W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 8mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 182 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4523 pF @ 1000 V |
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