G3R45MT17D
SIC MOSFET N-CH 61A TO247-3Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor G3R™ series N-Channel SiCFET, part number G3R45MT17D, offers a 1700V drain-source voltage with a continuous drain current of 61A at 25°C (Tc). This through-hole component features a low on-resistance of 58mOhm maximum at 40A and 15V gate drive. The device boasts a maximum power dissipation of 438W (Tc) and a gate charge (Qg) of 182 nC maximum at 15V. Input capacitance (Ciss) is specified at 4523 pF maximum at 1000V. Operating temperature range is -55°C to 175°C (TJ). The G3R45MT17D is packaged in a TO-247-3 configuration. This component is suitable for applications in high-voltage power conversion systems.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 40A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 438W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 8mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 182 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4523 pF @ 1000 V |
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