G3R450MT17J-TR
1700V 450M TO-263-7 G3R SIC MOSFManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The GeneSiC Semiconductor G3R™, LoRing™ series N-Channel SiCFET, part number G3R450MT17J-TR, offers a 1700 V drain-source voltage and 8 A continuous drain current at 25°C (Tc). This surface mount device features a maximum on-resistance of 585 mOhm at 4 A and 15 V, with typical gate charge of 18 nC at 15 V. Designed for high-temperature operation up to 175°C (TJ), it is packaged in a TO-263-7 configuration on tape and reel. With a maximum power dissipation of 71 W (Tc), this component is suitable for applications in power conversion, electric vehicles, and industrial motor drives.
Additional Information
Series: G3R™, LoRing™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 585mOhm @ 4A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 2mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +15V, -5V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 454 pF @ 1000 V |
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