G3R450MT17J
SIC MOSFET N-CH 9A TO263-7Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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The GeneSiC Semiconductor G3R™ series G3R450MT17J is a 1700V N-channel Silicon Carbide MOSFET. This surface mount device, housed in a TO-263-7 package, offers a continuous drain current of 9A (Tc) and a maximum power dissipation of 91W (Tc). Key characteristics include a low on-resistance of 585mOhm at 4A, 15V, and a gate charge of 18 nC at 15V. Input capacitance (Ciss) is a maximum of 454 pF at 1000V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for high-voltage power conversion applications in industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: G3R™RoHS Status: RoHS CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 585mOhm @ 4A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 91W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 2mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 454 pF @ 1000 V |
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