G3R40MT12K
SIC MOSFET N-CH 71A TO247-4Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor G3R™ N-Channel SiCFET G3R40MT12K. This 1200V device features a continuous drain current of 71A (Tc) and a maximum power dissipation of 333W (Tc). With a low on-resistance of 48mOhm at 35A and 15V, this TO-247-4 packaged MOSFET offers an input capacitance (Ciss) of 2929pF at 800V and a gate charge (Qg) of 106nC at 15V. Key parameters include a gate-source threshold voltage (Vgs(th)) of 2.69V at 10mA and a maximum gate-source voltage (Vgs) of ±15V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in industrial power supplies, motor drives, and electric vehicle charging.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 35A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 333W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 10mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2929 pF @ 800 V |
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