G3R40MT12J
SIC MOSFET N-CH 75A TO263-7Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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The GeneSiC Semiconductor G3R™ G3R40MT12J is a 1200V N-channel Silicon Carbide MOSFET designed for demanding power applications. This device features a low on-resistance of 48mOhm at 35A and 15V Vgs, with a continuous drain current capability of 75A at 25°C (Tc). The G3R40MT12J offers a robust power dissipation of 374W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Key electrical characteristics include a gate charge of 106 nC (max) at 15V and input capacitance of 2929 pF (max) at 800V. The MOSFET is housed in a surface-mount TO-263-7 package, making it suitable for high-density power designs across industries such as electric vehicle charging, industrial motor drives, and renewable energy systems.
Additional Information
Series: G3R™RoHS Status: RoHS CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 35A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 374W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 18mA (Typ) |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2929 pF @ 800 V |
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