G3R40MT12D
SIC MOSFET N-CH 71A TO247-3Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor G3R™ series N-Channel SiCFET, part number G3R40MT12D. This through-hole TO-247-3 packaged device features a drain-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 71 A at 25°C. The MOSFET exhibits a maximum on-resistance (Rds On) of 48 mOhm at 35 A and 15 V gate drive. Key parameters include a gate charge (Qg) of 106 nC and input capacitance (Ciss) of 2929 pF. With a maximum power dissipation of 333 W at 25°C (Tc), this component is suitable for demanding applications in electric vehicle charging, industrial power supplies, and solar inverters. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 35A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 333W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 10mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2929 pF @ 800 V |
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