G3R350MT12J
SIC MOSFET N-CH 11A TO263-7Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor G3R™ series N-Channel SiCFET, part number G3R350MT12J. This 1200 V device features a continuous drain current of 11A (Tc) and a maximum power dissipation of 75W (Tc). With a low on-resistance of 420mOhm at 4A and 15V, and a gate charge of 12 nC @ 15 V, it offers efficient switching. The TO-263-7 surface mount package is suitable for demanding applications. The G3R350MT12J is utilized in power factor correction, electric vehicle charging, and industrial power supplies. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: G3R™RoHS Status: RoHS CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 4A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 2mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 334 pF @ 800 V |
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