G3R350MT12D
SIC MOSFET N-CH 11A TO247-3Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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The GeneSiC Semiconductor G3R™ G3R350MT12D is a 1200V N-Channel Silicon Carbide (SiC) MOSFET designed for high-performance applications. This through-hole component features a TO-247-3 package and offers a continuous drain current of 11A (Tc) with a maximum power dissipation of 74W (Tc). Key electrical specifications include a drain-source voltage (Vdss) of 1200V, a maximum on-resistance (Rds On) of 420mOhm at 4A and 15V, and a gate charge (Qg) of 12 nC at 15V. The input capacitance (Ciss) is 334 pF at 800V, and the device operates across a temperature range of -55°C to 175°C (TJ). This SiC MOSFET is suitable for power conversion systems in industries such as electric vehicles, industrial power supplies, and renewable energy.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 4A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 2mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 334 pF @ 800 V |
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