G3R30MT12K
SIC MOSFET N-CH 90A TO247-4Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor G3R™ Series SiC MOSFET, part number G3R30MT12K. This N-Channel Silicon Carbide MOSFET features a 1200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 90A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 36mOhm at 50A and 15V Vgs. With a maximum power dissipation of 400W (Tc), it is housed in a TO-247-4 package for through-hole mounting. Key parameters include a gate charge (Qg) of 155 nC at 15V and input capacitance (Ciss) of 3901 pF at 800V. The operating temperature range is -55°C to 175°C (TJ). This component is utilized in applications such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 50A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 400W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 12mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3901 pF @ 800 V |
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