G3R30MT12J-TR
1200V 30M TO-263-7 G3R SIC MOSFEManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor G3R™, LoRing™ series N-Channel Silicon Carbide MOSFET, part number G3R30MT12J-TR. This device features a 1200V drain-source breakdown voltage and a continuous drain current of 85A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 34mOhm at 45A and 18V gate-source voltage. With a maximum power dissipation of 408W (Tc), this TO-263-7 packaged device is suitable for demanding applications. Key parameters include a gate charge of 118 nC at 15V and input capacitance of 3863 pF at 800V. It operates across a temperature range of -55°C to 175°C (TJ). This component is utilized in power conversion and motor control applications.
Additional Information
Series: G3R™, LoRing™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 45A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 408W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 24mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 118 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3863 pF @ 800 V |
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