G3R30MT12J
SIC MOSFET N-CH 96A TO263-7Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor G3R™ series N-Channel SiCFET, part number G3R30MT12J, offers a 1200V drain-source voltage and a continuous drain current of 96A at 25°C (Tc). This TO-263-7 package device features a low on-resistance of 36mOhm at 50A and 15V Vgs, with a maximum gate charge of 155 nC at 15V. The maximum power dissipation is rated at 459W (Tc). This component is designed for demanding applications requiring high voltage and current handling capabilities, often found in industrial power supplies, electric vehicle charging, and renewable energy systems. The SiCFET technology provides excellent thermal performance and efficiency.
Additional Information
Series: G3R™RoHS Status: RoHS CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 50A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 459W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 12mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3901 pF @ 800 V |
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