G3R20MT17N
SIC MOSFET N-CH 100A SOT227Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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The GeneSiC Semiconductor G3R™ series N-Channel SiCFET, part number G3R20MT17N, offers a 1700 V drain to source voltage and a continuous drain current of 100A at 25°C (Tc). This device features a maximum on-resistance of 26 mOhm at 75A and 15V gate-source voltage. With a maximum power dissipation of 523W (Tc), it is designed for demanding applications. Key parameters include a gate charge of 400 nC at 15V and input capacitance of 10187 pF at 1000V. The G3R20MT17N utilizes Silicon Carbide (SiC) technology for enhanced performance. It is packaged in a SOT-227-4, miniBLOC for chassis mounting and operates across a temperature range of -55°C to 175°C (TJ). This component finds application in high-voltage power conversion systems, including electric vehicles, renewable energy inverters, and industrial motor drives.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 75A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 523W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 15mA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10187 pF @ 1000 V |
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