G3R20MT12N
SIC MOSFET N-CH 105A SOT227Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor G3R™ Series N-Channel SiCFET, part number G3R20MT12N, offers a 1200V drain-source voltage with a continuous drain current capability of 105A at 25°C (Tc). This device features a low on-resistance of 24mOhm maximum at 60A and 15V gate drive. With a maximum power dissipation of 365W (Tc), it is housed in a chassis mount SOT-227-4, miniBLOC package. Key parameters include a gate charge of 219 nC at 15V and input capacitance of 5873 pF at 800V. The operating junction temperature range is -55°C to 175°C. This component is suitable for high-power applications in sectors such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 60A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 365W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 15mA |
| Supplier Device Package | SOT-227 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +20V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 219 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5873 pF @ 800 V |
Request a Quote
Clients Also Buy
G3R450MT17D
SIC MOSFET N-CH 9A TO247-3
G3R160MT12D
SIC MOSFET N-CH 22A TO247-3
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4