G3R20MT12K
SIC MOSFET N-CH 128A TO247-4Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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The GeneSiC Semiconductor G3R™ G3R20MT12K is a 1200 V N-Channel SiCFET designed for high-power applications. This component offers a continuous drain current of 128A (Tc) and a maximum power dissipation of 542W (Tc). Featuring a low on-resistance of 24mOhm @ 60A, 15V, it utilizes Silicon Carbide technology for enhanced performance and efficiency. The device is housed in a TO-247-4 package for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 219 nC @ 15 V and input capacitance (Ciss) of 5873 pF @ 800 V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 128A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 60A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 542W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 15mA |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 219 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5873 pF @ 800 V |
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