G3R160MT17J-TR
1700V 160M TO-263-7 G3R SIC MOSFManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor G3R™, LoRing™ series N-Channel Silicon Carbide MOSFET, part number G3R160MT17J-TR. This surface mount device features a Drain-to-Source Voltage (Vdss) of 1700V and a continuous drain current (Id) of 18A at 25°C (Tc). The Rds On is specified at 224mOhm maximum at 10A, 15V. Key parameters include a Gate Charge (Qg) of 29 nC maximum at 15V and Input Capacitance (Ciss) of 854 pF maximum at 1000V. The component offers a maximum power dissipation of 145W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). Its package is a TO-263-7. This SiCFET is suitable for high-voltage power conversion applications in industries such as electric vehicles and industrial power supplies.
Additional Information
Series: G3R™, LoRing™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 224mOhm @ 10A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 145W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 5mA |
| Supplier Device Package | TO-263-7 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +15V, -5V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 854 pF @ 1000 V |
| Qualification | - |
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