G3R160MT17J
SIC MOSFET N-CH 18A TO263-7Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The GeneSiC Semiconductor G3R™, LoRing™ series G3R160MT17J is an N-Channel Silicon Carbide MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 1700 V and a continuous Drain Current (Id) of 18A at 25°C (Tc), with a maximum power dissipation of 187W (Tc). The on-resistance (Rds On) is specified at 224mOhm maximum at 10A and 15V gate-source voltage. Key parameters include a gate charge (Qg) of 29 nC maximum at 15V and input capacitance (Ciss) of 854 pF maximum at 1000V. Operating temperature range is -55°C to 175°C (TJ). The component is housed in a TO-263-7 surface mount package. This SiCFET is suitable for demanding power conversion applications across various industries.
Additional Information
Series: G3R™, LoRing™RoHS Status: RoHS CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 224mOhm @ 10A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 187W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 5mA |
| Supplier Device Package | TO-263-7 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 854 pF @ 1000 V |
| Qualification | - |
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