G3R160MT12J-TR
1200V 160M TO-263-7 G3R SIC MOSFManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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The GeneSiC Semiconductor G3R160MT12J-TR is a 1200V N-Channel Silicon Carbide MOSFET designed for demanding power applications. This device features the GeneSiC G3R™, LoRing™ technology, offering a low on-resistance of 180mOhm at 10A and 18V (Vgs). With a continuous drain current of 19A at 25°C (Tc) and a maximum power dissipation of 110W (Tc), it is suitable for high-efficiency switched-mode power supplies, electric vehicle charging, and industrial motor drives. The TO-263-7 surface mount package ensures ease of integration into printed circuit boards. Key electrical characteristics include a gate charge (Qg) of 23 nC at 15V and input capacitance (Ciss) of 724 pF at 800V (Vds). Operating temperature range is -55°C to 175°C (TJ). This component is supplied in tape and reel packaging.
Additional Information
Series: G3R™, LoRing™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 5mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Vgs (Max) | +22V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 724 pF @ 800 V |
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