G3R160MT12J
SIC MOSFET N-CH 19A TO263-7Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor G3R™ series N-channel Silicon Carbide MOSFET. This device features a Drain-Source Voltage (Vdss) of 1200V and a continuous drain current (Id) of 19A at 25°C (Tc). With a maximum Rds(on) of 208mOhm at 10A and 15V Vgs, it offers superior switching performance. The G3R160MT12J is housed in a TO-263-7 surface mount package, designed for efficient thermal management with a maximum power dissipation of 128W (Tc). Key parameters include a gate charge (Qg) of 23 nC and input capacitance (Ciss) of 724 pF. This SiCFET technology is suitable for high-voltage, high-frequency applications in power conversion, electric vehicles, and industrial motor drives. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: G3R™RoHS Status: RoHS CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 208mOhm @ 10A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 128W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 5mA (Typ) |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | +20V, -10V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 724 pF @ 800 V |
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