G3R160MT12D
SIC MOSFET N-CH 22A TO247-3Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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The GeneSiC Semiconductor G3R™ series G3R160MT12D is an N-Channel Silicon Carbide MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 1200V and a continuous drain current (Id) of 22A at 25°C (Tc). With a maximum Power Dissipation of 123W (Tc), it offers robust performance. The Rds On is specified at a maximum of 192mOhm at 10A and 15V drive voltage. Key parameters include Input Capacitance (Ciss) of 730pF and Gate Charge (Qg) of 28nC, both measured at specified conditions. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-247-3 package for through-hole mounting. This SiCFET technology is suitable for use in power conversion and motor drive systems.
Additional Information
Series: G3R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 192mOhm @ 10A, 15V |
| FET Feature | - |
| Power Dissipation (Max) | 123W (Tc) |
| Vgs(th) (Max) @ Id | 2.69V @ 5mA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF @ 800 V |
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