G2R50MT33K
3300V 50M TO-247-4 SIC MOSFETManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor G2R™ N-Channel SiC MOSFET, part number G2R50MT33K, offers a 3300V drain-source breakdown voltage. This TO-247-4 packaged device features a low on-resistance of 50mOhm at 40A and 20V gate-source voltage. With a continuous drain current of 63A (Tc) and a maximum power dissipation of 536W (Tc), it is engineered for high-power applications. Key parameters include a typical threshold voltage of 3.5V and a maximum gate charge of 340nC at 20V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for demanding power conversion and control systems across various industries.
Additional Information
Series: G2R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 536W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 10mA (Typ) |
| Supplier Device Package | TO-247-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 3300 V |
| Gate Charge (Qg) (Max) @ Vgs | 340 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7301 pF @ 1000 V |
Request a Quote
Clients Also Buy
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
G2R1000MT17J
SIC MOSFET N-CH 3A TO263-7
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
