G2R120MT33J
SIC MOSFET N-CH TO263-7Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor G2R™ series N-Channel SiCFET, part number G2R120MT33J, offers a 3300 V drain-to-source voltage and 35 A continuous drain current at 25°C. This surface mount device features a maximum on-resistance of 156 mOhm at 20 A and 20 V gate-source voltage. The TO-263-7 package is suitable for robust power applications. Key parameters include a maximum gate charge of 145 nC at 20 V and input capacitance of 3706 pF at 1000 V. Maximum gate-source voltage is +/- 25 V and -10 V. Operating temperature ranges from -55°C to 175°C. This component is utilized in high-voltage power conversion systems, electric vehicle charging, and industrial motor drives.
Additional Information
Series: G2R™RoHS Status: RoHS CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A |
| Rds On (Max) @ Id, Vgs | 156mOhm @ 20A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 3300 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3706 pF @ 1000 V |
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