G2R1000MT33J-TR
3300V 1000M TO-263-7 G2R SIC MOSManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor’s G2R1000MT33J-TR is an N-Channel Silicon Carbide (SiC) MOSFET from the LoRing™ series. This device offers a Drain-Source Voltage (Vdss) of 3300V and a continuous drain current (Id) of 5A at 25°C, with a maximum power dissipation of 74W at the same temperature. Featuring a low on-resistance of 1.2 Ohm maximum at 2A and 20V, it is packaged in a TO-263-7 (D2PAK) surface mount configuration, supplied on tape and reel. The gate-source voltage (Vgs) limits are +20V and -5V. Key parameters include a gate charge (Qg) of 21 nC maximum at 20V and input capacitance (Ciss) of 238 pF maximum at 1000V. This component is suitable for high-voltage power applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: LoRing™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 2mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +20V, -5V |
| Drain to Source Voltage (Vdss) | 3300 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 238 pF @ 1000 V |
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