G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor G2R™ series N-Channel SiCFET, part number G2R1000MT33J. This surface mount device offers a 3300 V drain-to-source voltage (Vdss) and a continuous drain current of 4A (Tc). Featuring a low on-resistance of 1.2 Ohm maximum at 2A and 20V Vgs, this TO-263-7 packaged component is rated for 74W maximum power dissipation. Key parameters include input capacitance (Ciss) of 238 pF at 1000 V and gate charge (Qg) of 21 nC at 20 V. The operating temperature range is -55°C to 175°C (TJ). This technology is utilized in high-voltage power conversion applications across industrial and automotive sectors.
Additional Information
Series: G2R™RoHS Status: RoHS CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 2mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +20V, -5V |
| Drain to Source Voltage (Vdss) | 3300 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 238 pF @ 1000 V |
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