G2R1000MT17J-TR
1700V 1000M TO-263-7 G2R SIC MOSManufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The GeneSiC Semiconductor G2R™, LoRing™ series G2R1000MT17J-TR is an N-channel Silicon Carbide MOSFET designed for high-voltage applications. This component offers a Drain to Source Voltage (Vdss) of 1700V and a continuous drain current (Id) of 5A at 25°C. Featuring a low Rds On of 1.2Ohm maximum at 2A, 20V, and a gate charge (Qg) of 11 nC maximum, it is suitable for demanding power conversion tasks. The device has a maximum power dissipation of 44W (Tc) and operates across a temperature range of -55°C to 175°C. Packaged in a TO-263-7 (TO-263CA) surface mount configuration and supplied in a Digi-Reel®, this MOSFET is utilized in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: G2R™, LoRing™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +20V, -5V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 139 pF @ 1000 V |
Request a Quote
Clients Also Buy
GA10SICP12-263
TRANS SJT 1200V 25A D2PAK
G3R350MT12D
SIC MOSFET N-CH 11A TO247-3
G3F320MT12J-TR
1200V 320M TO-263-7 G3F SIC MOSF
