G2R1000MT17J
SIC MOSFET N-CH 3A TO263-7Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The GeneSiC Semiconductor G2R™ G2R1000MT17J is a 1700V N-Channel Silicon Carbide MOSFET designed for high-performance power applications. This device features a continuous drain current (Id) of 3A at 25°C (Tc) and a maximum power dissipation of 54W (Tc). With a low on-resistance (Rds On) of 1.2 Ohm at 2A and 20V, it minimizes conduction losses. The input capacitance (Ciss) is rated at a maximum of 139 pF at 1000V. The G2R1000MT17J is housed in a TO-263-7 (D2PAK) surface-mount package, suitable for demanding operating temperatures from -55°C to 175°C (TJ). Key applications include electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: G2R™RoHS Status: RoHS CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Supplier Device Package | TO-263-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +20V, -10V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 139 pF @ 1000 V |
Request a Quote
Clients Also Buy
G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3
G2R50MT33K
3300V 50M TO-247-4 SIC MOSFET
G2R1000MT33J
SIC MOSFET N-CH 4A TO263-7
