G2R1000MT17D
SIC MOSFET N-CH 4A TO247-3Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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The GeneSiC Semiconductor G2R™ series N-Channel SiCFET, part number G2R1000MT17D, offers a 1700 V drain-source voltage with a continuous drain current of 5 A at 25°C case temperature. This through-hole component features a maximum on-resistance of 1.2 O at 2 A and 20 V gate-source voltage, with a maximum power dissipation of 44 W at the case temperature. Key parameters include a gate charge of 11 nC and input capacitance of 111 pF at 1000 V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-247-3 package. This SiC MOSFET technology is suitable for applications in high-voltage power conversion and electric vehicle powertrains.
Additional Information
Series: G2R™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 500µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Drain to Source Voltage (Vdss) | 1700 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 111 pF @ 1000 V |
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