2N7640-GA
TRANS SJT 650V 16A TO276Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor's 2N7640-GA is a Silicon Carbide Junction Transistor (SJT) designed for high-power applications. This Surface Mount device, housed in a TO-276AA package, offers a drain-to-source voltage (Vdss) of 650 V and a continuous drain current (Id) of 16A at 25°C (155°C Tc). With a maximum power dissipation of 330W (Tc), it achieves an Rds On of 105mOhm at 16A. The input capacitance (Ciss) is 1534 pF at 35 V. This component operates across a wide temperature range of -55°C to 225°C (TJ). The 2N7640-GA is suitable for demanding power conversion and industrial motor drive applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-276AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) (155°C) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 16A |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-276 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1534 pF @ 35 V |
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