2N7639-GA
TRANS SJT 650V 15A TO257Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The GeneSiC Semiconductor 2N7639-GA is a 650V Silicon Carbide Junction Transistor (SJT) designed for high-power applications. This through-hole component features a continuous drain current of 15A (Tc), with a maximum power dissipation of 172W (Tc). The drain-source voltage (Vdss) is rated at 650V, and the on-resistance (Rds On) is listed as 105mOhm at 15A. With a maximum junction temperature of 225°C and an input capacitance (Ciss) of 1534 pF at 35V, this device is suitable for demanding power conversion and motor control systems. The TO-257 package facilitates robust thermal management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) (155°C) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 15A |
| FET Feature | - |
| Power Dissipation (Max) | 172W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-257 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1534 pF @ 35 V |
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