2N7638-GA
TRANS SJT 650V 8A TO276Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
GeneSiC Semiconductor 2N7638-GA is a 650V Silicon Carbide Junction Transistor with a continuous drain current of 8A at 25°C. This TO-276AA surface mount device offers a maximum power dissipation of 200W. Key parameters include a drain-to-source voltage of 650V and a typical Rds On of 170mOhm at 8A. The input capacitance (Ciss) is specified at 720pF at 35V. The operating junction temperature range is -55°C to 225°C. This component is utilized in high-power applications across industries such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-276AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) (158°C) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 8A |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-276 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 35 V |
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