2N7637-GA
TRANS SJT 650V 7A TO257Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The GeneSiC Semiconductor 2N7637-GA is a Silicon Carbide Junction Transistor designed for high-voltage and high-current applications. This component features a 650 V drain-to-source voltage and a continuous drain current of 7 A at 25°C, with a maximum junction temperature of 165°C. Its maximum power dissipation is 80 W at the case temperature. The device offers a low on-resistance of 170 mOhm at 7 A. Packaged in a TO-257 through-hole configuration, the 2N7637-GA is suitable for demanding applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. The input capacitance (Ciss) is specified at 720 pF at 35 V. The operating temperature range is -55°C to 225°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) (165°C) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7A |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-257 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 35 V |
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