2N7636-GA
TRANS SJT 650V 4A TO276Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor 2N7636-GA is a Silicon Carbide Junction Transistor designed for high-performance applications. This device offers a drain-source voltage of 650 V and a continuous drain current of 4 A at 25°C. Key specifications include a maximum on-resistance (Rds On) of 415 mOhm at 4 A, and a maximum power dissipation of 125 W at 25°C. The input capacitance (Ciss) is 324 pF at 35 V. This component utilizes a TO-276 surface mount package and operates across a temperature range of -55°C to 225°C. The GeneSiC Semiconductor 2N7636-GA is suitable for use in power supply, motor control, and industrial automation applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-276AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) |
| Rds On (Max) @ Id, Vgs | 415mOhm @ 4A |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-276 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 324 pF @ 35 V |
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