2N7635-GA
TRANS SJT 650V 4A TO257Manufacturer: GeneSiC Semiconductor
Categories: Single FETs, MOSFETs
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GeneSiC Semiconductor's 2N7635-GA is a 650V Silicon Carbide Junction Transistor (SJT) designed for high-performance applications. This through-hole component, housed in a TO-257 package, offers a continuous drain current capability of 4A at a junction temperature of 165°C, with a maximum power dissipation of 47W. The 2N7635-GA features a low on-resistance of 415mOhm at 4A. Its robust construction and silicon carbide technology make it suitable for demanding power switching applications in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. The operating junction temperature range is -55°C to 225°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | - |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) (165°C) |
| Rds On (Max) @ Id, Vgs | 415mOhm @ 4A |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-257 |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 324 pF @ 35 V |
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