MBRH20030RL
DIODE SCHOTTKY REV 30V 200A D-67Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor MBRH20030RL Schottky diode, featuring a 30V reverse voltage rating and a maximum forward voltage of 580mV at 200A. This high-current device offers an average rectified current capability of 200A with a typical reverse leakage of 3mA at 30V. Designed for robust performance, it operates efficiently across a junction temperature range of -55°C to 150°C. The MBRH20030RL is housed in a D-67 chassis mount package, facilitating thermal management in demanding applications. Its Schottky technology ensures fast switching characteristics, making it suitable for power supply, motor control, and industrial power conversion systems. This component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | D-67 |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky, Reverse Polarity |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200A |
| Supplier Device Package | D-67 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 580 mV @ 200 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 30 V |
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