MBRH20030L
DIODE SCHOTTKY 30V 200A D-67Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor MBRH20030L is a 30V, 200A Schottky diode in a D-67 chassis mount package. This diode features a low forward voltage of 580 mV at 200A and a reverse leakage of 3 mA at 30V. Designed for high-power applications, its operating junction temperature range is -55°C to 150°C. The MBRH20030L is suitable for demanding industrial power supplies, electric vehicle charging systems, and renewable energy inverters where efficient rectification and high current handling are critical. Its bulk packaging facilitates high-volume integration into advanced power conversion architectures.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | D-67 |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200A |
| Supplier Device Package | D-67 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 580 mV @ 200 A |
| Current - Reverse Leakage @ Vr | 3 mA @ 30 V |
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