GKN26/12
DIODE GEN PURP 1.2KV 25A DO4Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GKN26-12 is a standard recovery diode designed for general-purpose applications. This component features a 1200 V reverse voltage rating and a 25 A average rectified current capability. The forward voltage drop is specified at 1.55 V maximum at 60 A. With a reverse leakage current of 4 mA at 1200 V, it offers efficient operation. The GKN26-12 is housed in a DO-203AA, DO-4 stud mount package, facilitating chassis mounting. It operates across a junction temperature range of -40°C to 180°C. This diode is suitable for various industrial power applications, including power supplies, motor drives, and welding equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 25A |
| Supplier Device Package | DO-4 |
| Operating Temperature - Junction | -40°C ~ 180°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 60 A |
| Current - Reverse Leakage @ Vr | 4 mA @ 1200 V |
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