GD10MPS12E
DIODE SIL CARB 1.2KV 29A TO252-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
Quality Control: Learn More
Diode 1200 V 29A Surface Mount TO-252-2
Additional Information
Series: SiC Schottky MPS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 367pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 29A |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1200 V |
Request a Quote
Clients Also Buy
GB01SLT06-214
DIODE SIL CARB 650V 1A DO214AA
GB01SLT12-214
DIODE SIL CARBIDE 1.2KV 2.5A SMB
GB02SLT12-214
DIODE SIL CARB 1.2KV 2A DO214AA
