GD10MPS12A
DIODE SIL CARB 1.2KV 25A TO220-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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Diode 1200 V 25A Through Hole TO-220-2
Additional Information
Series: SiC Schottky MPS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 367pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 25A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1200 V |
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