GC50MPS12-247
DIODE SIL CARB 1.2KV 212A TO247Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GC50MPS12-247 is a 1200V SiC Schottky MPS™ diode designed for high-performance power applications. This through-hole component, packaged in a TO-247-2, offers a substantial forward current rating of 212A (Io) with a maximum forward voltage (Vf) of 1.8V at 50A. Featuring a reverse leakage of only 40 µA at 1200V, this device exhibits zero reverse recovery time (trr) for currents exceeding 500mA, significantly improving switching efficiency. Operating across a junction temperature range of -55°C to 175°C, its typical capacitance is 3263pF at 1V and 1MHz. The advanced Silicon Carbide technology makes it suitable for demanding industries such as electric vehicle charging, industrial motor drives, and renewable energy systems.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 3263pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 212A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 50 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 1200 V |
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