GC50MPS06-247
DIODE SIL CARB 650V 50A TO247-2Manufacturer: GeneSiC Semiconductor
Categories: Single Diodes
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GeneSiC Semiconductor GC50MPS06-247, a SiC Schottky MPS™ diode, offers exceptional performance with a 650V reverse voltage rating and a 50A average rectified current capability. This through-hole component, packaged in a TO-247-2, features a maximum junction operating temperature of 175°C. The device exhibits a zero reverse recovery time for currents greater than 500mA, a key characteristic of its advanced Silicon Carbide Schottky technology. Ideal for demanding power applications, this diode is utilized in sectors such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: SiC Schottky MPS™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 50A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
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